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APT30GP60B2DL(G) APT30GP60LDL(G)
600V, 30A, VCE(ON) = 2.2V Typical
Resonant Mode Combi IGBT(R)
The POWER MOS 7(R) IGBT used in this resonant mode combi is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies.
Features * Low Conduction Loss * Low Gate Charge * Ultrafast Tail Current shutoff * Low forward Diode Voltage (VF) * Ultrasoft Recovery Diode * SSOA Rated * RoHS Compliant Typical Applications * Induction Heating * Welding * Medical * High Power Telecom * Resonant Mode Phase Shifted Bridge
G C E G C E
C G E
MAXIMUM RATINGS
Symbol VCES VGE VGEM I C1 I C2 I CM SSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Gate-Emitter Voltage Transient Continuous Collector Current @ TC = 25C Continuous Collector Current @ TC = 110C Pulsed Collector Current
1
All Ratings: TC = 25C unless otherwise specified.
Ratings UNIT
600 20 30 100 49 120 120A @ 600V 463 -55 to 150 300
Watts C Amps
Volts
@ TC = 25C
Switching Safe Operating Area @ TJ = 150C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVCES VGE(TH) VCE(ON) I CES I GES Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 1.0mA) Gate Threshold Voltage (VCE = VGE, I C = 1mA, Tj = 25C) MIN TYP MAX UNIT
600 3 4.5 2.2 2.1 275
2
6 2.7
Volts
Collector-Emitter On Voltage (VGE = 15V, I C = 30A, Tj = 25C) Collector-Emitter On Voltage (VGE = 15V, I C = 30A, Tj = 125C) Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25C)
2
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Microsemi Website - http://www.microsemi.com
052-6355
Rev B
Gate-Emitter Leakage Current (VGE = 20V)
100
nA
6-2009
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125C)
2750
A
DYNAMIC CHARACTERISTICS
Symbol Cies Coes Cres VGEP Qg Qge Qgc SSOA td(on) tr td(off) tf Eon1 Eon2 Eoff td(on) tr td(off) tf Eon1 Eon2 Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge
3
APT30GP60B2DL_LDL(G)
Test Conditions Capacitance VGE = 0V, VCE = 25V f = 1 MHz Gate Charge VGE = 15V VCE = 300V I C = 30A TJ = 150C, R G = 5, VGE = 15V, L = 100H,VCE = 600V Inductive Switching (25C) VCC(Peak) = 400V VGE = 15V I C = 30A
4 5
MIN
TYP
MAX
UNIT pF V nC
3200 295 20 7.5 90 20 30 120 13 18 55 46 260 335 250 330 13 18 84 80 260 508 518 750 J
ns ns A
Gate-Emitter Charge Gate-Collector ("Miller ") Charge Switching SOA Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy
4 5
RG = 5 TJ = +25C
Turn-on Switching Energy (Diode)
6
J
Inductive Switching (125C) VCC(Peak) = 400V VGE = 15V I C = 30A RG = 5 TJ = +125C
Turn-on Switching Energy (Diode)
6
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol RJC RJC WT Characteristic Junction to Case (IGBT) Junction to Case (DIODE) Package Weight MIN TYP MAX UNIT C/W gm
.27 .88 5.90
1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. (See Figure 24.) 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
Microsemi reserves the right to change, without notice, the specifications and information contained herein. 6-2009 052-6355 Rev B
TYPICAL PREFORMANCE CURVES
60 50 40 30 20 TC=25C 10 0 TC=125C
VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE
60 50 40 30 20 10 0
APT30GP60B2DL_LDL(G)
VGE = 10V. 250s PULSE TEST <0.5 % DUTY CYCLE
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
TC=-55C
TC=-55C
TC=25C TC=125C
0 0.5 1 1.5 2 2.5 3 VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
0 0.5 1 1.5 2 2.5 3 VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 1, Output Characteristics(VGE = 15V) 200 VGE, GATE-TO-EMITTER VOLTAGE (V) 180 IC, COLLECTOR CURRENT (A) 160 140 120 100 80 60 40 20 0 0 2 4 6 8 10 12 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) TJ = 25C TJ = 125C
250s PULSE TEST <0.5 % DUTY CYCLE
FIGURE 2, Output Characteristics (VGE = 10V) 16 14 12 10 8 6 4 2 0 0 10 20 30 40 50 60 70 80 90 100 GATE CHARGE (nC) FIGURE 4, Gate Charge VCE=480V
I = 30A C T = 25C
J
TJ = -55C
VCE=120V VCE=300V
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
4 3.5 3 2.5 2 1.5 1 0.5
TJ = 25C. 250s PULSE TEST <0.5 % DUTY CYCLE
3.5 3 2.5 2 1.5 1 0.5
VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE
IC= 60A IC= 30A IC=15A
IC= 60A IC= 30A IC= 15A
8 10 12 14 16 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage 1.2
0
6
-25 0 25 50 75 100 125 TJ, JUNCTION TRMPERATURE (C) FIGURE 6, On State Voltage vs Junction Temperature 140
0 -50
BVCES, COLLECTOR-TO-EMITTER BREAKDOWN VOLTAGE (NORMALIZED)
1.10 1.05 1.0 0.95 0.90 0.85 0.8 -50
IC, DC COLLECTOR CURRENT(A)
1.15
120 100 80 60 40 20 0 -50 6-2009 052-6355 Rev B
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, Breakdown Voltage vs. Junction Temperature
-25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 8, DC Collector Current vs Case Temperature
APT30GP60B2DL_LDL(G)
25 VGE= 10V td (OFF), TURN-OFF DELAY TIME (ns) td(ON), TURN-ON DELAY TIME (ns) 100 90 80 70 60 50 40 30 20 10 0 10 20 30 40 50 60 70 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 10, Turn-Off Delay Time vs Collector Current 100
TJ = 25 or 125C,VGE = 10V RG = 5, L = 100H, VCE = 400V VGE =10V,TJ=25C VGE =10V,TJ=125C VGE =15V,TJ=125C
20
VCE = 400V RG = 5 L = 100 H
15 VGE= 15V 10
VGE =15V,TJ=25C
VCE = 400V TJ = 25C, TJ =125C RG = 5 L = 100 H 0 0 10 20 30 40 50 60 70 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current 5 50
0
40 tr, RISE TIME (ns) tf, FALL TIME (ns)
80
TJ = 125C, VGE = 10V or 15V
30
60
20
40
TJ = 25C, VGE = 10V or 15V
10
TJ = 25 or 125C,VGE = 15V RG = 5, L = 100H, VCE = 400V
20
10 20 30 40 50 60 70 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector Current 1400 1200 1000
TJ = 125C,VGE =10V
V = 400V CE V = +15V GE R =5
G
0
0
0 10 20 30 40 50 60 70 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 12, Current Fall Time vs Collector Current
V = 400V CE V = +15V GE R =5
G
0
EOFF, TURN OFF ENERGY LOSS (J)
EON2, TURN ON ENERGY LOSS (J)
TJ = 125C,VGE =15V
TJ = 125C, VGE = 10V or 15V TJ = 25C, VGE = 10V or 15V
800 600 400 200 0
TJ = 25C,VGE =15V TJ = 25C,VGE =10V
0 10 20 30 40 50 60 70 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Loss vs Collector Current 2500 SWITCHING ENERGY LOSSES (J) SWITCHING ENERGY LOSSES (J)
V = 400V CE V = +15V GE T = 125C
J
0 10 20 30 40 50 60 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 14, Turn Off Energy Loss vs Collector Current
= 400V V CE V = +15V GE R =5
G
2000
1500
Eon2, 60A Eoff, 60A
Eon2,60A
Eoff,60A
1000 Eon2, 30A Eoff, 30A 0 Eon2, 15A
6-2009
500
Eon2,30A Eoff, 30A Eon2,15A
Rev B
052-6355
Eoff, 15A 10 20 30 40 50 60 RG, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs. Gate Resistance 0
Eoff, 15A 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) FIGURE 16, Switching Energy Losses vs Junction Temperature 0
TYPICAL PREFORMANCE CURVES
10,000 5,000 1,000 500 Coes Cies 140 120 IC, COLLECTOR CURRENT (A) 100 80 60 40 20 0
APT30GP60B2DL_LDL(G)
C, CAPACITANCE ( F)
P
100 50 Cres
10 5 0
0 10 20 30 40 50 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 17, Capacitance vs Collector-To-Emitter Voltage 0.30 0.25 0.20 0.9
100 200 300 400 500 600 700 VCE, COLLECTOR TO EMITTER VOLTAGE Figure 18, Minimim Switching Safe Operating Area
0
ZJC, THERMAL IMPEDANCE (C/W)
0.7
0.15
0.5 Note: 0.3
PDM
0.10
t1 t2 Duty Factor D = t1/t2
0.05 0 10
-5
0.1 0.05 10
-4
SINGLE PULSE
-3 -2
Peak TJ = PDM x ZJC + TC
10 10 10-1 RECTANGULAR PULSE DURATION (SECONDS) Figure 19, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
1.0
300 FMAX, OPERATING FREQUENCY (kHz)
100
Fmax = min(f max1 , f max 2 )
50
f max1 = f max 2 =
T = 125C J T = 75C C D = 50 % V = 400V CE R =5
G
0.05 t d(on ) + t r + t d(off ) + t f Pdiss - Pcond E on 2 + E off
Pdiss =
20 30 40 50 60 IC, COLLECTOR CURRENT (A) Figure 20, Operating Frequency vs Collector Current
10
TJ - TC R JC
0
10
052-6355
Rev B
6-2009
APT30GP60B2DL_LDL(G)
APT30DL60 APT15DF60
10 % TJ = 125 C td(on)
Gate Voltage
V CC
IC
V CE
tr
Collector Current 90%
A D.U.T.
5% 10% 5% Collector Voltage
Switching Energy
Figure 21, Inductive Switching Test Circuit
Figure 22, Turn-on Switching Waveforms and Definitions
90%
VTEST
td(off)
Gate Voltage Collector Voltage tf
TJ = 125 C
A
*DRIVER SAME TYPE AS D.U.T.
V CE
90%
IC 100uH V CLAMP B
10% Switching Energy
0
A DRIVER* D.U.T.
Collector Current
Figure 23, Turn-off Switching Waveforms and Definitions
Figure 24, EON1 Test Circuit
052-6355
Rev B
6-2009
DYNAMIC CHARACTERISTICS
APT30GP60B2DL_LDL(G)
ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE
MAXIMUM RATINGS
Symbol IF(AV) IF(RMS) IFSM Characteristic / Test Conditions Maximum Average Forward Current (TC = 126C, Duty Cycle = 0.5) RMS Forward Current (Square wave, 50% duty) Non-Repetitive Forward Surge Current (TJ = 45C, 8.3ms)
All Ratings: TC = 25C unless otherwise specified.
APT30GP60B2DL_LDL(G) UNIT
30 51 320
Amps
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions IF = 30A VF Forward Voltage IF = 60A IF = 30A, TJ = 125C MIN TYP MAX UNIT Volts
1.3 2.0 1.9
MIN TYP
1.6
DYNAMIC CHARACTERISTICS
Symbol trr trr Qrr IRRM trr Qrr IRRM trr Qrr IRRM Characteristic Test Conditions MAX UNIT ns nC Reverse Recovery Time I = 1A, di /dt = -100A/s, V = 30V, T = 25C F F R J Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current IF = 30A, diF/dt = -1000A/s VR = 400V, TC = 125C IF =30A, diF/dt = -200A/s VR = 400V, TC = 125C IF = 30A, diF/dt = -200A/s VR = 400V, TC = 25C
64 317 962 7 561 2244 9 264 3191 26 -
-
Amps ns nC Amps ns nC Amps
0.9 ZJC, THERMAL IMPEDANCE (C/W) 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 10-5 10-4 10-3 10-2
Note:
PDM
t1 t2
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t
10-1
1.0 6-2009 052-6355 Rev B
RECTANGULAR PULSE DURATION (seconds) FIGURE 1. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
APT30GP60B2DL_LDL(G)
100 90 80 IF, FORWARD CURRENT (A) 70 60 50 40 30 20 10 0 0 800 TJ= 125C trr, COLLECTOR CURRENT (A) TJ= 150C TJ= 55C 700 600 500 400 300 200 100 0 15A 60A 30A
T = 125C J V = 400V
R
TJ= 25C
Qrr, REVERSE RECOVERY CHARGE (nC)
IRRM, REVERSE RECOVERY CURRENT (A)
0.5 1.0 1.5 2.0 2.5 3.0 VF, ANODE-TO-CATHODE VOLTAGE (V) FIGURE 2, Forward Current vs. Forward Voltage 4500 T = 125C 60A J V = 400V R 4000 3500 3000 2500 2000 1500 1000 500 15A 30A
0 200 400 600 800 1000 -diF/dt, CURRENT RATE OF CHANGE (A/s) FIGURE 3, Reverse Recovery Time vs. Current Rate of Change 32 28 24 20 16 12 8 4 0
T = 125C J V = 400V
R
60A 30A 15A
0 200 400 600 800 1000 -diF/dt, CURRENT RATE OF CHANGE (A/s) FIGURE 4, Reverse Recovery Charge vs. Current Rate of Change 1.2 1 0.8 0.6 0.4 0.2 0 IRRM
0
0 200 400 600 800 1000 -diF/dt, CURRENT RATE OF CHANGE (A/s) FIGURE 5, Reverse Recovery Current vs. Current Rate of Change 70 60 50 IF(AV) (A) 40 30 20 10 0
Kf, DYNAMIC PARAMETERS (Normalized to 1000A/s)
tRR QRR
0
25
50
75
100
125
150
25
50
75
100
125
150
175
TJ, JUNCTION TEMPERATURE (C) FIGURE 6, Dynamic Parameters vs Junction Temperature 300 CJ, JUNCTION CAPACITANCE (pF) 250 200 150 100 50 0
Case Temperature (C) FIGURE 7, Maximum Average Forward Current vs. Case Temperature
052-6355
Rev B
6-2009
10 100 400 VR, REVERSE VOLTAGE (V) FIGURE 8, Junction Capacitance vs. Reverse Voltage
1
Vr +18V 0V D.U.T.
trr/Qrr Waveform
diF /dt Adjust
CURRENT TRANSFORMER
Figure 9. Diode Test Circuit
1 2 3 4
IF - Forward Conduction Current diF /dt - Rate of Diode Current Change Through Zero Crossing. IRRM - Maximum Reverse Recovery Current. Zero
1
4
6
5 3 2
0.25 IRRM Slope = diM/dt
trr - Reverse Recovery Time, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through IRRM and 0.25 IRRM passes through zero. Qrr - Area Under the Curve Defined by IRRM and trr. diM/dt - Maximum Rate of Current Increase During the Trailing Portion of trr.
5 6
Figure 10, Diode Reverse Recovery Waveform and Definitions
T-MAXTM (B2) Package Outline
4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244)
TO-264 (L) Package Outline
4.60 (.181) 5.21 (.205) 1.80 (.071) 2.01 (.079) 19.51 (.768) 20.50 (.807) 3.10 (.122) 3.48 (.137) 5.79 (.228) 6.20 (.244)
(Cathode)
Collector
20.80 (.819) 21.46 (.845)
Collector
25.48 (1.003) 26.49 (1.043)
4.50 (.177) Max. 0.40 (.016) 0.79 (.031)
2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 2.29 (.090) 2.69 (.106) 19.81 (.780) 21.39 (.842)
2.29 (.090) 2.69 (.106)
19.81 (.780) 20.32 (.800)
1.01 (.040) 1.40 (.055)
(Cathode)
Gate Collector Emitter
(Anode)
0.48 (.019) 0.84 (.033) 2.59 (.102) 3.00 (.118)
Gate Collector Emitter
(Cathode) (Anode)
2.21 (.087) 2.59 (.102)
5.45 (.215) BSC 2-Plcs.
These dimensions are equal to the TO-247 without the mounting hole. Dimensions in Millimeters and (Inches)
Dimensions in Millimeters and (Inches)
Microsemi's products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. US and Foreign patents pending. All Rights Reserved.
052-6355
Rev B
5.45 (.215) BSC 2-Plcs.
6-2009
0.76 (.030) 1.30 (.051) 2.79 (.110) 3.18 (.125)

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